A Method for Monitoring of Bond Wire Degradation in Insulated Gate Bipolar Transistor

Non-Confidential description of the invention

The invention relates to the field of electric reliability of electronic devices and equipment, and in particular to a method to check the health of Insulated Gate Bipolar Transistor (IGBT) by online monitoring of the bond wire degradation inside an (I.G.B.T.). The present method relates to a method for online monitoring the bond wire degradation inside an Insulated Gate Bipolar Transistor. This method can be applied to IGBT to determine its health. The method uses ON-State voltage at inflexion point. The present invention remove the temperature dependence of VCE,ON and determine the health of bond wire package inside the IGBT without halting the operation of the inverter. The invention measures the voltage at inflexion point which is independent of temperature and it give the complete information about the health of bond.

Inventors

Dr.Sandeep Anand(EE),Mr.Anup Anurag(EE),Mr.Arun Singh(BT-MT Dual Degree Student)

IPA

201611029236

Date of Filing

27/08/2016

Status

Date Of Grant

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