A Method of Fabricating High-performance Poly (Vinylidenedifluoride-trifluoroethylene),P(VDF-TRFE) Films

Non-Confidential description of the invention

The invention relates to a method for fabricating organic thin film ferroelectric materials having improved fatigue and thermal stability for use in nonvolatile memory applications. The applications can also extend to piezoelectric and pyroelectric devices such as sensors and detectors. The invention relates to a process of fabricating P(VDF-TrFE) films by modifying the solvent composition. Two solvents MEK and DMSO were mixed in predetermined ratios and that co-solvent mixture was used for fabricating the P(VDF10 TrFE) films. By virtue of such method driven P(VDF-TrFE) films, the ferroelectric capacitors comprising of the same were found to achieve low voltage operation, thermal stability and fatigue endurance, which indicated improved ferroelectric performance of the devices. In addition, the films made by same process also yielded high piezo- and pyro- electric coefficient, indicating improved piezo- and pyro-electric performances of the devices.

Inventors

Prof.Deepak Gupta(MSE&SCDT), Prof.Ashish Garg(MSE&SCDT) & Ms.Deepa Singh(PhD Student)

IPA

201611005439

Date of Filing

16/02/2016

Status

Date Of Grant

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