Development of A-IGZO Based Dual Gate ISFET using Al2o3 as Top Gate/sensing Dielectric

Non-Confidential description of the invention

Disclosed herein the development of Amorphous indium gallium zinc oxide (a- IGZO) based dual gate ion sensitive field effect transistor (ISFET) using Al2O3 as top gate/ sensing dielectric. The said DG ISFET is of enhanced pH sensitivity, more particularly 5.5 to 6 folds more from Nernst limit. Al2O3 is more particularly sputtered to be more effective for sensing applications for restricted annealing temperature ≤ 400o C because of its higher surface roughness (provides more number of surface sites).

Inventors

Dr. Siddhartha Panda (ChE), Mr. Narendra Kumar (PhD Student, MSP)

IPA

201911005381

Date of Filing

11/02/2019

Status

Date Of Grant

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