Electron Transport Layer Based on Doped ZnO Layer and Method Thereof

Non-Confidential description of the invention

The present invention relates to the field of improved electron transport layer for an electronic and optoelectronic device. Particularly, the invention provides an electron transport layer for organic solar cell. The electron transport layer is based on zinc oxide (ZnO) doped with [6,6]-phenyl-C61-butyric acid methyl ester to form a nanocomposite layer.

Inventors

Mr. Dhirendra Kumar Chaudhary (Proj. Scientist, NCFlexi), Dr. S S K Iyer (EE)

IPA

201911019218

Date of Filing

14/05/2019

Status

Date Of Grant

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